Samsung introduced UFS 4.0 which uses Samsung’s Gen 7 V-NAND memory and proprietary controller with sequential read speeds of up to 4,200 MB/s.
While a smartphone’s storage capacity is one of the most important selling points for a consumer, the type of storage is often overlooked. Most Android smartphones (and many electronics) use the UFS (Universal Flash Storage) and most flagships nowadays use either 3.0 or 3.1 UFS storage.
On Tuesday, Samsung introduced UFS 4.0 which uses Samsung’s Gen 7 V-NAND memory and proprietary controller with sequential read speeds of up to 4,200 MB/s and sequential write speeds of up to 2,800 MB/s. The new storage tech will also deliver a 46% power-efficiency improvement in sequential read speeds compared to the previous generation.
Per lane, UFS 4.0 supports up to 23.2Gbps per lane, doubled from UFS 3.1. Samsung boasts this amount of “bandwidth is perfect for 5G smartphones requiring huge amounts of data processing,” and it expects to see the technology be adopted in VR, AR, and automotive applications.
The new storage tech can be configured to support up to 1TB of storage so we hope that means we’ll begin seeing more smartphones outfitted with 512GB and 1TB capacities.
Samsung expects mass production of UFS 4.0 storage to start in Q3 so we can expect to see smartphones don the new technology towards the end of the year, or on the Galaxy S23 series that should launch in Q1 of 2023. Read the full Twitter thread to read Samsung’s full announcement about UFS 4.0.
This news was originally published by GSM Arena.